Export citation and abstract Express 11 115503. The high temperature required for a realistic suboxide flux from the conventionally used oxide charge (SnO, An efficient alternative is the mixed metal + oxide charge, producing a metal-free suboxide flux at lower activation energy and significantly lower cell temperature without measurable creation and emission of additional oxygen.
Several successful examples of oxide heterostructures and heterointerfaces, which have been fabricated by oxide MBE, are presented, demonstrating the power of the method. Cracking products can be distinguished from parent molecules of the direct flux by determining the minimum electron energy required for their ionization (and thus detection), the so called, For all charges, QMS spectra at sufficiently high temperatures were recorded. To gain access to this content, please complete the Recommendation 3. M. E. White, M. Y. Tsai, F. Wu, and J. S. Speck, “, C. E. Simion, F. Schipani, A. Papadogianni, A. Stanoiu, M. Budde, A. Oprea, U. Weimar, O. Bierwagen, and N. Barsan, “, This option allows users to search by Publication, Volume and Page. J. © 2018 The Japan Society of Applied Physics S. Ghose, M. S. Rahman, J. S. Rojas-Ramirez, S. Juan, M. Caro, R. Droopad, A. Arias, and N. Nedev, “, 21. JSAP member access. N. K. Kalarickal, Z. Xia, J. McGlone, S. Krishnamoorthy, W. Moore, M. Brenner, A. R. Arehart, S. A. Ringel, and S. Rajan, “, Mechanism of Si doping in plasma assisted MBE growth of, 13. metal-organic molecular beam epitaxy (MOMBE) gas source molecular beam epitaxy (GSMBE) Beispiel: chemische Gasphasenepitaxie von Siliciumschichten Die Herstellung von einkristallinen Siliciumschichten auf Siliciumsubstraten kann mithilfe der chemischen Gasphasenepitaxie erfolgen.
In our MBE system, a growth rate on the order of 1 Å/s relates to a partial pressure of the source material in the effusion cell on the order of 10, For the present study, a high temperature single filament effusion cell (CreaTec) with a 10 cm, For the Sn-related system, we monitored only isotopes with the highest natural abundance, i.e., Sn and SnO, at 120 amu and 136 amu with an abundance of 32.6% and Sn, Finally, as an initial application test of our mixed SnO source scheme, we mounted a dual filament effusion cell with a mixed Sn + SnO, A great advantage of the QMS is its sensitivity to the smallest amounts of emitted species from the source charge as well as the ability to distinguish different isotopes, leading to unique fingerprints. Phys. Published 25 October 2018, Patrick Vogt et al 2018 Appl. Selecting this option will search all publications across the Scitation platform, Selecting this option will search all publications for the Publisher/Society in context, The Journal of the Acoustical Society of America, Phase transformation in MOCVD growth of (Al, Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal, New approaches for achieving more perfect transition metal oxide thin films, Recent progress on the electronic structure, defect, and doping properties of Ga, Metal oxide catalyzed epitaxy (MOCATAXY) of. R. Colin, J. Drowart, and G. Verhagen, “, Mass-Spectrometric study of the vaporization of tin oxides, 30. The resulting cracking products show up as additional species in the mass spectra. A focus will be put on the synthesis of oxide heterointerfaces by using atomic layer-by-layer (ALL)-oxide MBE, an advanced deposition method which allows for designing materials down to the atomic layer level. By continuing to use this site you agree to our use of cookies. Marks, and A. Facchetti, “, Metal oxides for optoelectronic applications. M. Y. Tsai, O. Bierwagen, M. E. White, and J. S. Speck, “, 10.
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, U.S.A. O. Bierwagen, A. Proessdorf, M. Niehle, F. Grosse, A. Trampert, and M. Klingsporn, “, Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon, 15.
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